New Product
SiB412DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
Notes:
t 1
t 2
0.1
0.05
0.02
Single Pulse
P DM
t 1
t 2
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 80 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70439.
www.vishay.com
6
Document Number: 70439
S-80515-Rev. C, 10-Mar-08
相关PDF资料
SIB413DK-T1-GE3 MOSFET P-CH 20V 9A SC75-6
SIB433EDK-T1-GE3 MOSFET P-CH 20V SC-75-6
SIB452DK-T1-GE3 MOSFET N-CH 190V 1.5A SC75-6
SIB457EDK-T1-GE3 MOSFET P-CH D-S 20V PPAK SC75-6L
SIB914DK-T1-GE3 MOSFET 2N-CH 8V 1.5A PPAK SC75-6
SIE800DF-T1-GE3 MOSFET N-CH D-S 30V POLARPAK
SIE802DF-T1-GE3 MOSFET N-CH D-S 30V POLARPAK
SIE804DF-T1-GE3 MOSFET N-CH D-S 150V POLARPAK
相关代理商/技术参数
SIB413DK-T1-GE3 功能描述:MOSFET 20V 9.0A 13W 75mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIB414DK-T1-E3 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 8V 7.9A 6-Pin PowerPAK SC-75 T/R
SIB414DK-T1-GE3 功能描述:MOSFET 8.0V 9.0A 13W 26mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIB415DK 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SIB415DK-T1-GE3 功能描述:MOSFET 30V 9.0A 13W 87mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIB417AEDK-T1-GE3 制造商:Vishay Semiconductors 功能描述:P-CHANNEL 1.2-V (G-S) MOSFET - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET P-CHAN 8V G-S PWRPACK 制造商:Vishay Intertechnologies 功能描述:Single P-Channel 8 V 0.032 O 11.3 nC Power Mosfet - PowerPAK SC-75-6L
SIB417DK-T1-GE3 功能描述:MOSFET 8.0V 9.0A 13W 52mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIB417EDK-T1-GE3 功能描述:MOSFET 8.0V 9.0A 13W 58mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube